NANO PRO GFET Sensor Chip for Liquid Medium Detection

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LS0063
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NANO PRO GFET Sensor Chip for Liquid Medium Detection

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Global Head Office

Email: Marknanossr@gmail.com

Tel:+86 15606950920

Wechat: 15606950920

Address:  Building 1, No. 39 Xinchang Road, Haicang District, Xiamen City, Fujian Province, China

NANO PRO™ GFET Sensor Chip for Liquid Medium Detection

NANO PRO™ provide GFET Sensor Chip for Liquid Medium Detection. The chip is designed for measurements in liquid medium. The new version provides 12 graphene devices connected in parallel, with encapsulation on the metal pads to avoid degradation and reduce leakage currents; the probe pads are located near the periphery of the chip. It also includes a non-encapsulated electrode at the center of the chip, which allows liquid gating without the need of an external gate electrode (such as Ag/AgCl probes). This device architecture enhances signal-to-noise ratio and reduces parasitics. It also removes device-to-device variation, smoothing device response and improving reliability.

Typical Specifications

  • Growth method: CVD synthesis
  • Graphene transfer: Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Substrate: Si/SiO2
  • Substrate thickness: 675 μm
  • Resistivity of Si substrate: 1-10 Ω.cm
  • Gate oxide thickness: 90 nm
  • Metallization: 50nm Au-based Contacts
  • Encapsulation: 50 nm Al2O3
  • Chip dimensions: 10 mm x 10 mm
  • Number of GFETs per chip:  12
  • Optical Yield: ≥75
  • Average field-effect mobility (back gating): >1000 cm2/V.s
  • Average Dirac point (back gating):
  • Average Dirac point (liquid gating):

Absolute Maximum Ratings

  • Maximum gate-source voltage (liquid gating in PBS): ± 2V
  • Maximum gate-source voltage (back gating): ± 50V
  • Maximum temperature rating: 150 °C
  • Maximum drain-source current density: 107A.cm-2

     

Quality Control

All our samples are subjected to a rigorous QC in order to ensure a high quality products.

  • Optical microscopy inspection of all the devices
  • Raman Spectroscopy of each fabrication batch
  • Electrical characterization via back gating of each fabrication batch
  • AFM of each fabrication batch

Applications

Graphene field-effect transistors (GFETs) have unprecedented sensitivity to the surrounding environment and is an ideal transducer for a variety of sensing applications.  Depending on the application, GFETs can be tuned to be sensitive only to the stimulus of interest and have shown breakthrough performance in areas such as graphene device research, chemical sensing, bioelectronics and biosensing.

NANOSSR  offers high quality and best price on the market for GFETs products. Please contact us for more information.

    € 4.00
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